Behavior of polycrystalline SiC and Si surface-micromachined lateral resonant structures at elevated temperatures

被引：5

作者：

Fleischman, AJ ^{[1
]}

Roy, S ^{[1
]}

Zorman, CA ^{[1
]}

Mehregany, M ^{[1
]}

机构：

[1] Case Western Reserve Univ, Dept Elect Engn & Appl Phys, Microfabricat Lab, Cleveland, OH 44106 USA

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

MEMS; surface micromachining; high temperature; lateral resonant structures;

D O I：

10.4028/www.scientific.net/MSF.264-268.889

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline silicon (polysilicon) and polycrystalline silicon carbide (poly-SiC) lateral resonant structures were fabricated using a single mask surface micromachining process. The devices were operated at temperatures up to 900 degrees C and the variations in resonant frequency were monitored. It was observed that the polysilicon lateral resonant devices exhibited a greater reduction in resonant frequency than the comparable poly-SiC devices.

引用

页码：889 / 892

页数：4

共 4 条

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