Relaxor features in ferroelectric superlattices: A Maxwell-Wagner approach

被引:204
作者
Catalan, G [1 ]
O'Neill, D [1 ]
Bowman, RM [1 ]
Gregg, JM [1 ]
机构
[1] Queens Univ Belfast, Sch Math & Phys, Condensed Matter Phys & Mat Sci Res Div, Belfast BT7 1NN, Antrim, North Ireland
关键词
D O I
10.1063/1.1324729
中图分类号
O59 [应用物理学];
学科分类号
摘要
A Maxwell-Wagner series capacitor model is proposed to explain anomalous dielectric properties of ferroelectric superlattices. The results of the model show that a superlattice consisting of normal ferroelectric layers separated by low-resistivity interfacial regions can account for most experimental results reported to date, namely: dielectric enhancement for certain stacking periodicities, giant permittivities, and temperature migration of dielectric maxima as a function of frequency. The predictions of the model are discussed and compared to our own experimental results from thin film superlattice capacitors made by pulsed-laser deposition. (C) 2000 American Institute of Physics. [S0003-6951(00)05345-6].
引用
收藏
页码:3078 / 3080
页数:3
相关论文
共 25 条
[1]   SPACE-CHARGE RELAXATION IN PEROVSKITES [J].
BIDAULT, O ;
GOUX, P ;
KCHIKECH, M ;
BELKAOUMI, M ;
MAGLIONE, M .
PHYSICAL REVIEW B, 1994, 49 (12) :7868-7873
[2]  
CROSS LE, 1987, FERROELECTRICS, V76, P241, DOI 10.2109/jcersj.99.829
[3]  
Desu SB, 1999, MATER RES SOC SYMP P, V541, P457
[4]   Giant permittivity in epitaxial ferroelectric heterostructures [J].
Erbil, A ;
Kim, Y ;
Gerhardt, RA .
PHYSICAL REVIEW LETTERS, 1996, 77 (08) :1628-1631
[5]   Origin of dielectric relaxation observed for Ba0.5Sr0.5TiO3 thin-film capacitor [J].
Fukuda, Y ;
Numata, K ;
Aoki, K ;
Nishimura, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B) :5178-5180
[6]  
GITELSON AA, 1977, FIZ TVERD TELA, V19, P1121
[7]  
Kanno I, 1996, APPL PHYS LETT, V68, P328, DOI 10.1063/1.116705
[8]   Low-frequency dielectric relaxation of BaTiO3 thin-film capacitors [J].
Lee, SJ ;
Kang, KY ;
Han, SK .
APPLIED PHYSICS LETTERS, 1999, 75 (12) :1784-1786
[9]   Microstructure dependence of electrical properties of (Ba0.5Sr0.5)TiO3 thin films deposited on Pt/SiO2/Si [J].
Lee, WJ ;
Kim, HG ;
Yoon, SG .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (10) :5891-5894
[10]   Dielectric response in ferroelectric superlattices [J].
Li, SP ;
Eastman, JA ;
Vetrone, JM ;
Newnham, RE ;
Cross, LE .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1997, 76 (01) :47-57