Characterization of activated reactive evaporated MoO3 thin films for gas sensor applications

被引：68

作者：

Hussain, OM ^{[1
]}

Rao, KS ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Thin Film Lab, Tirupati 517502, Andhra Pradesh, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 80卷 / 03期

关键词：

MoO3 thin films; activated reactive evaporation; structure; optical properties; gas sensor;

D O I：

10.1016/S0254-0584(03)00101-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of molybdenum trioxide (MoO3) were prepared by activated reactive evaporation technique on Pyrex. glass substrates. The influence of oxygen partial pressure, substrate temperature and glow power on the structure, surface morphology and optical properties of MoO3 thin films was studied. The MoO3 films deposited in an oxygen partial pressure of 1 x 10(-3) Tort, glow power of 10 W and substrate temperature of 573 K exhibited predominantly a (0 k 0) orientation corresponding to the orthorhombic layered structure of alpha-MoO3. The evaluated optical band gap was 3.24 eV. The sensing property of these MoO3 films for gases like NH3 and CO was also studied to see the applicability for environmental monitoring. We have observed that the MoO3 thin films of alpha-phase are capable of detecting NH3 and CO gases at concentrations lower than 10 ppm in dry air. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：638 / 646

页数：9

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