ACTIVATED REACTIVE EVAPORATION PROCESS FOR HIGH RATE DEPOSITION OF COMPOUNDS

[1] ADAMS RP, BMRI6304 US BUR MIN

[2] AUWARTER M, 1960, Patent No. 2920002

[3] Brinsmaid D., 1957, U.S. patent, Patent No. [2,784,115, 2784115]

[4] BUNSHAH RF, UNPUBLISHED

[5] VAPOR-DEPOSITED THIN-FILM PIEZOELECTRIC TRANSDUCERS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (04) : 506 - &

[6] DUSHMAN S, 1962, SCIENTIFIC FOUNDATIO

[7] PRELIMINARY INVESTIGATIONS OF REACTIVELY EVAPORATED ALUMINUM OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 1008 - +

[8] OXYGEN-CONTROLLED CONDUCTION IN THIN FILMS OF CUPROUS IODIDE - A MIXED VALENCY ANION SEMICONDUCTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (02) : 119 - 121

[9] A12O3 FILMS PREPARED BY ELECTRON-BEAM EVAPORATION OF HOT-PRESSED A12O3 IN OXYGEN AMBIENT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 107 - +

[10] Holland L., 1966, VACUUM DEPOSITION TH

[1] ADAMS RP, BMRI6304 US BUR MIN

[2] AUWARTER M, 1960, Patent No. 2920002

[3] Brinsmaid D., 1957, U.S. patent, Patent No. [2,784,115, 2784115]

[4] BUNSHAH RF, UNPUBLISHED

[5] VAPOR-DEPOSITED THIN-FILM PIEZOELECTRIC TRANSDUCERS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (04) : 506 - &

[6] DUSHMAN S, 1962, SCIENTIFIC FOUNDATIO

[7] PRELIMINARY INVESTIGATIONS OF REACTIVELY EVAPORATED ALUMINUM OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 1008 - +

[8] OXYGEN-CONTROLLED CONDUCTION IN THIN FILMS OF CUPROUS IODIDE - A MIXED VALENCY ANION SEMICONDUCTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (02) : 119 - 121

[9] A12O3 FILMS PREPARED BY ELECTRON-BEAM EVAPORATION OF HOT-PRESSED A12O3 IN OXYGEN AMBIENT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 107 - +

[10] Holland L., 1966, VACUUM DEPOSITION TH