A12O3 FILMS PREPARED BY ELECTRON-BEAM EVAPORATION OF HOT-PRESSED A12O3 IN OXYGEN AMBIENT

被引:31
作者
HOFFMAN, D
LEIBOWITZ, D
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1971年 / 8卷 / 01期
关键词
D O I
10.1116/1.1316256
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:107 / +
页数:1
相关论文
共 12 条
[1]   BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J].
DEAL, BE ;
SNOW, EH ;
MEAD, CA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) :1873-&
[2]   ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J].
DEAL, BE ;
FLEMING, PJ ;
CASTRO, PL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :300-&
[3]   INTERFACE PROPERTIES OF SI-(SIO2)-AL2 O3 STRUCTURES [J].
DUFFY, MT ;
REVESZ, AG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) :372-+
[4]   PRELIMINARY INVESTIGATIONS OF REACTIVELY EVAPORATED ALUMINUM OXIDE FILMS ON SILICON [J].
FERRIEU, E ;
PRUNIAUX, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :1008-+
[5]  
GROVE AS, 1967, PHYS TECHNOL S, pCH12
[6]   AL2O3-SILICON MOS FIELD EFFECT TRANSISTORS [J].
NAGANO, K ;
IWAUCHI, S ;
TANAKA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (02) :277-+
[7]   RF SPUTTERED ALUMINUM OXIDE FILMS ON SILICON [J].
SALAMA, CAT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :913-&
[8]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH3
[9]   CHARACTERISTICS OF AL-AL2O3-SI STRUCTURES FORMED BY REACTIVE SUTTERING [J].
TANAKA, T ;
IWAUCHI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (11) :1420-&
[10]  
TUNG SK, 1967, J ELECTROCHEM SOC, V114, P2756