CHARACTERISTICS OF AL-AL2O3-SI STRUCTURES FORMED BY REACTIVE SUTTERING

被引:16
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TANAKA, T
IWAUCHI, S
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10.1143/JJAP.7.1420
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O59 [应用物理学];
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页码:1420 / &
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[4]   AL2O3-SILICON INSULATED GATE FIELD EFFECT TRANSISTORS [J].
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