AL2O3-SILICON INSULATED GATE FIELD EFFECT TRANSISTORS

[1] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +

[2] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[3] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[4] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 376 - &

[5] THE FORMATION OF METAL OXIDE FILMS USING GASEOUS AND SOLID ELECTROLYTES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) : 1240 - 1245

[6] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[7] NIGH HE, 1967, SEALED GATE IGFET

[8] EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07): : 1168 - +

[9] EFFECTS OF ELECTRON IRRADIATION OF METAL-NITRIDE-SEMICONDUCTOR INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (05): : 784 - &

[10] A NEW INSULATED-GATE SILICON TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (01): : 87 - +

[1] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +

[2] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[3] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[4] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 376 - &

[5] THE FORMATION OF METAL OXIDE FILMS USING GASEOUS AND SOLID ELECTROLYTES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) : 1240 - 1245

[6] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[7] NIGH HE, 1967, SEALED GATE IGFET

[8] EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07): : 1168 - +

[9] EFFECTS OF ELECTRON IRRADIATION OF METAL-NITRIDE-SEMICONDUCTOR INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (05): : 784 - &

[10] A NEW INSULATED-GATE SILICON TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (01): : 87 - +