CHARACTERISTICS OF SILICON SILICON-DIOXIDE STRUCTURES FORMED BY DC REACTIVE SPUTTERING

被引：8

作者：

IWAUCHI, S

TANAKA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 10期

关键词：

D O I：

10.1143/JJAP.7.1193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1193 / +

页数：1

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