RF SPUTTERED ALUMINUM OXIDE FILMS ON SILICON

被引：59

作者：

SALAMA, CAT

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 07期

关键词：

D O I：

10.1149/1.2407682

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：913 / &

共 33 条

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J].

ABOAF, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :948-&

[2]

AUGUSTINE E, 1966, 5 P MICR S, P5

[3] INFRARED LATTICE VIBRATIONS AND DIELECTRIC DISPERSION IN CORUNDUM [J].

BARKER, AS .

PHYSICAL REVIEW, 1963, 132 (04) :1474-+

[4]

CHENEY GT, 1968, IEEE T ED, VED15, P410

[5] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J].

CHU, TL ;

SZEDON, JR ;

LEE, CH .

SOLID-STATE ELECTRONICS, 1967, 10 (09) :897-&

[6] DIELECTRIC MATERIALS IN SEMICONDUCTOR DEVICES [J].

CHU, TL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (01) :25-+

[7] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J].

DEAL, BE ;

SNOW, EH ;

MEAD, CA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) :1873-&

[8] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J].

DEAL, BE ;

FLEMING, PJ ;

CASTRO, PL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :300-&

[9]

DOO VY, 1969, J ELECTROCHEM SOC, V116, pC117

[10] TRANSITIONS IN VAPOR-DEPOSITED ALUMINA FROM 300 DEGREES TO 1200 DEGREES C [J].

DRAGOO, AL ;

DIAMOND, JJ .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1967, 50 (11) :568-&

← 1 2 3 4 →