RF SPUTTERED ALUMINUM OXIDE FILMS ON SILICON

被引:59
作者
SALAMA, CAT
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D O I
10.1149/1.2407682
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:913 / &
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[11]   PRELIMINARY INVESTIGATIONS OF REACTIVELY EVAPORATED ALUMINUM OXIDE FILMS ON SILICON [J].
FERRIEU, E ;
PRUNIAUX, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :1008-+
[12]   PHASE CHANGES IN THIN REACTIVELY SPUTTERED ALUMINA FILMS [J].
FRIESER, RG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (04) :357-&
[13]  
GREGOR LV, 1968, J ELECTROCHEM SOC, V115, pC238
[14]  
GREGOR LV, 1968, SOLID STATE TECHNOLO, P40
[15]   SILICON NITRIDE FILMS BY REACTIVE SPUTTERING [J].
HU, SM ;
GREGOR, LV .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) :826-+
[16]   EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J].
HU, SM ;
KERR, DR ;
GREGOR, LV .
APPLIED PHYSICS LETTERS, 1967, 10 (03) :97-&
[17]  
KALTER H, 1969, J ELECTROCHEM SOC, V116, pC250
[18]  
MATSUSHITA H, 1968, J ELECTROCHEM SOC, V115, pC69
[19]   AL2O3-SILICON MOS FIELD EFFECT TRANSISTORS [J].
NAGANO, K ;
IWAUCHI, S ;
TANAKA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (02) :277-+
[20]  
NIGH HE, 1967, IEEE T ELECTRON DEVI, VED14, P631