DIELECTRIC MATERIALS IN SEMICONDUCTOR DEVICES

被引：23

作者：

CHU, TL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1969年 / 6卷 / 01期

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D O I：

10.1116/1.1492617

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：25 / +

页数：1

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[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE
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[2] LOW-TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS
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[3] ATALLA MM, 1960, PROPERTIES ELEMENTAL, P163
[4] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &
[5] BJORCK E, 1963, VIDE, V105, P262
[6] STUDIES OF SODIUM IN SIO2 FILMS BY NEUTRON ACTIVATION AND RADIOTRACER TECHNIQUES
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : 862 - +
[7] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
CHU, TL
LEE, CH
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 717 - &
[8] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES
CHU, TL
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[9] CHU TL, 1965, T METALL SOC AIME, V233, P568
[10] A NOVEL TECHNIQUE FOR THE DEPOSITION OF SILICA FILMS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1433 - 1434

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