Determination of the epitaxial growth of zinc oxide nanowires on sapphire by grazing incidence synchrotron X-ray diffraction

被引:17
作者
Campos, L. C.
Dalal, S. H.
Baptista, D. L.
Magalhaes-Paniago, R.
Ferlauto, A. S.
Milne, W. I.
Ladeira, L. O.
Lacerda, R. G.
机构
[1] Univ Fed Minas Gerais, Dept Fis, Lab Nanomat, BR-30123970 Belo Horizonte, MG, Brazil
[2] Univ Fed Minas Gerais, Dept Fis, Lab Nanomat, BR-30123970 Belo Horizonte, MG, Brazil
[3] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England
关键词
D O I
10.1063/1.2735956
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter shows that aligned zinc oxide (ZnO) nanowires growth on sapphire substrates is epitaxial and demonstrates the crystallographic relation between the two using grazing incidence synchrotron x-ray diffraction (XRD). The in-plane lattice match between the sapphire and the nanowires was directly probed by using XRD at grazing angles of incidence, where the lattice match between the (0001) plane of the sapphire and the (11-20) plane of the ZnO were observed simultaneously. It will also be shown that gold acts as a catalyst to initiate ZnO nanowire growth, but it does not interfere with the epitaxial mechanism between the nanowires and the sapphire substrate. (C) 2007 American Institute of Physics.
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页数:3
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