Atomic-scale properties of low-index ZnO surfaces

被引:176
作者
Diebold, U [1 ]
Koplitz, LV
Dulub, O
机构
[1] Tulane Univ, Dept Phys, New Orleans, LA 70118 USA
[2] Loyola Univ, Dept Chem, New Orleans, LA 70118 USA
关键词
scanning tunneling microscopy; zinc oxide; surface structure; morphology; roughness; topography;
D O I
10.1016/j.apsusc.2004.06.040
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Zinc oxide (ZnO) is an important material in heterogeneous catalysis and has recently attracted interest as a wide band-gap semiconductor for electro-optical devices. The surfaces and interfaces of ZnO are critical for understanding the mechanistics of surface chemical reactions and for the fabrication of high quality hetero- and homoepitaxial films with long-term stability. The surfaces of the main low-index planes, i.e., surfaces with (0 0 0 1), (0 0 0 1), (10 10), (1 1 2 0) and (1 1 2 1) orientations are characterized with high-resolution scanning tunneling microscopy and compared to first-principles total-energy calculations. (C) 2004 Published by Elsevier B.V.
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页码:336 / 342
页数:7
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