Current conduction mechanism of Si/Ti-based Ohmic contacts to n-GaN

被引：29

作者：

Kim, DW ^{[1
]}

Baik, HK ^{[1
]}

机构：

[1] Yonsei Univ, Dept Met Engn, Thin Film Mat Lab, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 07期

关键词：

D O I：

10.1063/1.1289057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the Ohmic contact formation mechanism of Si/Ti-based contacts to n-GaN. The Si/Ti contact system was selected because Ti silicides have a low work function and also Si has been used widely as an n-type dopant. Our experimental results show that the Ohmic behavior of Si/Ti-based contacts were attributed to the low barrier height of the Ti silicide/GaN interface. The contact resistance of Si/Ti-based Ohmic contacts decreased exponentially with the measuring temperature. It can be concluded that current flows over the low barrier height by thermionic emission. (C) 2000 American Institute of Physics. [S0003-6951(00)03733-5].

引用

页码：1011 / 1013

页数：3

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