Photoluminescence dynamics in the near bandgap region of homoepitaxial GaN layers

被引：21

作者：

Korona, KP

Bergman, JP

Monemar, B

Baranowski, JM

Pakula, K

Grzegory, I

Porowski, S

机构：

[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[3] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

GaN; MOCVD; photoluminescence; time-resolved FL; donors; acceptors;

D O I：

10.4028/www.scientific.net/MSF.258-263.1125

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Homoepitaxial MOCVD-grown gallium nitride (GaN) layers have been studied by photoluminescence (PL) measurements and picosecond tps) time-resolved photoluminescence spectroscopy (TRPL). The TRPL has shown that the free excitons have the fastest dynamics (decay time of a few picoseconds for FEB and of about 100 ps for FEA). Then, the 3.472 eV DBE emission rises (with the rise time similar to the free excitons decay time). The 3.467 eV ABE has the slowest decay (about 0.7 ns). The identification of the two-electron transition DBE --> D* at the energy E-DBE - 22 meV has been confirmed by TRPL measurements. The PL emission of an exciton bound to a second acceptor A(2)BE at similar to 3.457 eV is reported. An analysis of the long living part of the DBE emission is also presented.

引用

页码：1125 / 1130

页数：6

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