Light amplification in silicon nanocrystals by pump and probe transmission measurements

被引:39
作者
Dal Negro, L
Cazzanelli, M
Danese, B
Pavesi, L
Iacona, F
Franzò, G
Priolo, F
机构
[1] Univ Trent, INFM, I-38050 Trento, Italy
[2] Univ Trent, Dipartimento Fis, I-38050 Trento, Italy
[3] CNR, IMM, Sez Catania, I-95121 Catania, Italy
[4] Univ Catania, INFM, I-95129 Catania, Italy
[5] Univ Catania, Dipartimento Fis, I-95129 Catania, Italy
关键词
D O I
10.1063/1.1803613
中图分类号
O59 [应用物理学];
学科分类号
摘要
Net optical gain in silicon nanocrystals (Si-nc) has been measured by pump and probe transmission experiments. Si-nc active layers have been produced by plasma enhanced chemical vapor deposition on transparent quartz substrates. Continuous and pulsed pump and probe transmission measurements have shown clear evidences of net probe amplification with fast (nanosecond) response time. Transfer matrix and rate equations modeling of the nonlinear signal transmission allowed to extract the gain spectra for different pump intensities yielding good qualitative agreement with the experimental data. Gain cross sections per nanocrystals of the order of 3x10(-16) cm(2) have been deduced. The physical origin of the optical amplification is interpreted within a four level recombination model describing the dynamics of strongly localized excitons at the Si-nc/SiO2 interface. (C) 2004 American Institute of Physics.
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收藏
页码:5747 / 5755
页数:9
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