Hydrogen in CVD diamond films

被引：19

作者：

Rutledge, KM ^{[1
]}

Gleason, KK ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

CHEMICAL VAPOR DEPOSITION | 1996年 / 2卷 / 02期

关键词：

D O I：

10.1002/cvde.19960020203

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Understanding of the incorporation of hydrogen and its role in determining the properties of CVD diamond is critical to the successful commercial production of these films. Hydrogen is usually the most abundant impurity in solid-state CVD diamond and has been studied extensively by a variety of techniques, including nuclear magnetic resonance, infrared spectroscopy, and several others. This article reviews the application of a number of characterization methods to the study of hydrogen in CVD diamond, with particular attention toward understanding the incorporation of this impurity and its effect on properties of commercial significance.

引用

页码：37 / 43

页数：7

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