Femtosecond laser irradiation stress induced in pure silica

被引:86
作者
Poumellec, B
Sudrie, L
Franco, M
Prade, B
Mysyrowicz, A
机构
[1] Univ Paris 11, Lab Physicochim Etat Solide, UMR CNRS UPS 8648, F-91405 Orsay, France
[2] ENSTA, Lab Opt Appl, F-91761 Palaiseau, France
来源
OPTICS EXPRESS | 2003年 / 11卷 / 09期
关键词
D O I
10.1364/OE.11.001070
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We reveal stress fields induced by femtosecond laser irradiation by investigating the topography of surface relaxation of a cleavage of silica plates in which irradiation was performed, varying intensity, laser polarization and displacement of the writing beam. The stress field appears to depend on the writing parameters differently according to the laser intensity. For pulse intensity larger than 0.1 muJ, a first shear stress developed. Above 0.25 muJ, another shear stress appears that is dependent on the direction of writing and coupling with a phase matching condition between the pump wave and the third harmonic. (C) 2003 Optical Society of America.
引用
收藏
页码:1070 / 1079
页数:10
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