Solution deposited NiO thin-films as hole transport layers in organic photovoltaics

被引：280

作者：

Steirer, K. Xerxes ^{[1
,2
]}

Chesin, Jordan P. ^{[3
]}

Widjonarko, N. Edwin ^{[2
,4
]}

Berry, Joseph J. ^{[2
]}

Miedaner, Alex ^{[2
]}

Ginley, David S. ^{[2
]}

Olson, Dana C. ^{[2
]}

机构：

[1] Colorado Sch Mines, Dept Appl Phys, Golden, CO 80401 USA

[2] Natl Renewable Energy Lab, Natl Ctr Photovolta, Golden, CO 80401 USA

[3] Brown Univ, Div Engn, Providence, RI 02912 USA

[4] Univ Colorado, Dept Phys, Boulder, CO 80309 USA

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 08期

关键词：

Hole transport layer; Nickel oxide; NiO; Organic solar cells; Anode surface modifier; PEDOT:PSS; SOLAR-CELLS; INTERFACE; OXIDE;

D O I：

10.1016/j.orgel.2010.05.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Organic solar cells require suitable anode surface modifiers in order to selectively collect positive charge carriers and improve device performance. We employ a nickel metal organic ink precursor to fabricate NiO hole transport layers on indium tin oxide anodes. This solution deposited NiO annealed at 250 degrees C and plasma treated, achieves similar OPV device results reported with NiO films from PLD as well as PEDOT:PSS. We demonstrate a tunable work function by post-processing the NiO with an O-2-plasma surface treatment of varied power and time. We find that plasma treatment is necessary for optimal device performance. Optimal devices utilizing a solution deposited NiO hole transport layer show lower series resistance and increased fill factor when compared to solar cells with PEDOT: PSS. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1414 / 1418

页数：5

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