Wet etching of (0001) GaN/Al2O3 grown by MOVPE

被引：26

作者：

Kim, BJ ^{[1
]}

Lee, JW ^{[1
]}

Park, HS ^{[1
]}

Park, Y ^{[1
]}

Kim, TI ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Photon Lab, Suwon 440660, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 05期

关键词：

GaN; H3PO4; NaOH; KOH; wet etching;

D O I：

10.1007/s11664-998-0184-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

H3PO4, NaOH, and KOH solutions are found to be useful for removing nitrogen depleted layers or damage induced by high temperature annealing or dry etching of metalorganic chemical vapor deposition-grown (0001)GaN/Al2O3. Solutions are selective to the (0001)plane of GaN. However, certain flat planes etched without etch pits are exposed by wet etching.

引用

页码：L32 / L34

页数：3

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