Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

被引：85

作者：

Ashley, T.

Buckle, L.

Datta, S.

Emeny, M. T.

Hayes, D. G.

Hilton, K. P.

Jefferies, R.

Martin, T.

Phillips, Tj

WaIiis, D. J.

Wilding, P. J.

Chan, R.

机构：

[1] Goodfellow Cambridge Ltd, Huntingdon PE29E 6WR, England

[2] Malvern Technol Ctr, Malvern WR14 3PS, Worcs, England

[3] Intel Corp, Technol & Manfacturing Grp, Components Res, Hillsboro, OR 97124 USA

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 14期

关键词：

D O I：

10.1049/el:20071335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The heterogeneous integration of InSb quantum well transistors onto silicon substrates is investigated for the first time. 85 nm gate length FETs with f(r) = 305 GHz at V-ds = 0.5 V and DC performance suitable for digital logic are demonstrated on material with a buffer just 1.8 mu m thick. An initial step towards integrating InSb FETs with mainstream Si CMOS for high-speed, energy-efficient logic applications has been achieved.

引用

页码：777 / 779

页数：3