Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms

被引：29

作者：

Owen, JHG ^{[1
]}

Miki, K ^{[1
]}

Bowler, DR ^{[1
]}

Goringe, CM ^{[1
]}

Goldfarb, I ^{[1
]}

Briggs, GAD ^{[1
]}

机构：

[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

SURFACE SCIENCE | 1997年 / 394卷 / 1-3期

基金：

英国工程与自然科学研究理事会;

关键词：

chemical vapour deposition; density functional calculations; models of surface chemical reactions; scanning tunneling microscopy; silane; silicon; single crystal epitaxy; surface structure;

D O I：

10.1016/S0039-6028(97)00592-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The initial stages of gas-source growth of Si(001) using disilane have been investigated using a combination of elevated-temperature STM and atomistic modelling. The reaction pathway from the initial adsorption of disilane fragments up to the nucleation of short strings of epitaxial dimers is discussed. By the use of our STM to study disilane at the temperatures of interest, and atomistic modelling to calculate structural stability and significant activation barriers, we are able to propose a complete description of the mechanisms which underlie gas-source growth. (C) 1997 Elsevier Science B.V.

引用

页码：79 / 90

页数：12

共 31 条

[1] SI BINDING AND NUCLEATION ON SI(100) [J].