Pt/ZnO nanowire Schottky diodes

被引：121

作者：

Heo, YW ^{[1
]}

Tien, LC

Norton, DP

Pearton, SJ

Kang, BS

Ren, F

LaRoche, JR

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1802372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO2-coated Si substrates. The diodes exhibit excellent ideality factors of 1.1 at 25 degreesC and very low (1.5 X 10(-10) A, equivalent to 2.35 A cm(-2), at -10 V) reverse currents. The nanowire diodes show a strong photoresponse, with the current-voltage characteristics becoming ohmic under ultraviolet illumination (366 nm light). The on-off current ratio of the diodes at 0.15/-5 V was similar to6. These results show the ability to manipulate the electron transport in nanoscale ZnO devices. (C) 2004 American Institute of Physics.

引用

页码：3107 / 3109

页数：3

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