Ridged waveguide to microstrip transition for electromagnetic characterisation of materials in V-band

被引：16

作者：

Hinojosa, J

Kruck, JF

Dambrine, G

机构：

[1] Univ Politecn Cartagena, Dept Elect Tecnol Computadoras & Proyectos Edific, Murcia 30203, Spain

[2] Inst Elect & Microelect Nord, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 17期

关键词：

D O I：

10.1049/el:20001067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-quality ridged waveguide to microstrip transition for determining the electromagnetic characteristics of thin-film materials in the V-band is presented. Complex permittivity and permeability are computed from S-parameter measurements of a microstrip cell propagating the dominant mode. Measurements in V-band of alumina show good agreement between measured and predicted values.

引用

页码：1468 / 1470

页数：3

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