Formation of β-FeSi2 layers on Si(001) substrates

被引：88

作者：

Tanaka, M ^{[1
]}

Kumagai, Y ^{[1
]}

Suemasu, T ^{[1
]}

Hasegawa, F ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 305, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 6A期

关键词：

beta-FeSi2; thermal reaction method; reactive deposition epitaxy; absorption coefficient; direct band gap;

D O I：

10.1143/JJAP.36.3620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystal quality of beta-FeSi2 formed on Si(001) by both the thermal reaction method and reactive deposition epitaxy (RDE) was investigated under various growth conditions. Compared with the thermal reaction method, the crystal quality of beta-FeSi2 formed by RDE was improved. In the RDE method, the Fe deposition rate as well as the growth temperature influenced the crystal quality of beta-FeSi2. Among various growth temperatures and deposition rates of Fe, highly (100)-oriented epitaxial beta-FeSi2 was formed by RDE at 470 degrees C and 0.1 Angstrom/s, respectively. Measurements of the absorption coefficient at room temperature (RT) indicate that beta-FeSi2 has a direct band gap of about 0.83 eV.

引用

页码：3620 / 3624

页数：5

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