Electrochemical preparation of In and Al doped ZnO thin films for CuInSe2 solar cells

被引：60

作者：

Kemell, M

Dartigues, F

Ritala, M

Leskelä, M

机构：

[1] Univ Helsinki, Dept Chem, Inorgan Chem Lab, FIN-00014 Helsinki, Finland

[2] ICMCB CNRS, Inst Chim Mat Condensee Bordeaux, F-33608 Pessac, France

来源：

THIN SOLID FILMS | 2003年 / 434卷 / 1-2期

基金：

芬兰科学院;

关键词：

electrochemistry; zinc oxide; CuInSe2; solar cells;

D O I：

10.1016/S0040-6090(03)00464-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO thin films doped with either In or Al were electrodeposited potentiostatically at 80 degreesC from aqueous solutions containing Zn(NO3)(2) and either InCl3 or Al(NO3)(3). The films were used for the preparation of pn-junctions based on electrodeposited CuInSe2 thin films. The pn-junctions were prepared both with and without the chemical bath deposited US interlayer, thus demonstrating the possibility to make all-electrodeposited pn-junctions for CuInSe2 thin film solar cells. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：20 / 23

页数：4

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