Optoelectronic device simulation of Bragg reflectors and their influence on surface-emitting laser characteristics

被引：47

作者：

Winston, DW ^{[1
]}

Hayes, RE

机构：

[1] IBM Corp, Microelect, Hopewell Jct, NY 12533 USA

[2] Univ Colorado, Dept Elect & Comp Engn, Boulder, CO 80309 USA

[3] Univ Colorado, Ctr Optoelect Comp Syst, Boulder, CO 80309 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 04期

关键词：

distributed Bragg reflector lasers; optoelectronic devices; quantum-well lasers; semiconductor device modeling; semiconductor device thermal factors;

D O I：

10.1109/3.663456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a simulation analysis of distributed Bragg reflectors (DBR's) and their affect on the characteristics of vertical-cavity surface-emitting lasers (VCSEL's), The SimWindows semiconductor device simulator models the close interaction between electrical, optical, and thermal processes present in VCSEL's, This simulator is used to examine the electrical characteristics of some simple DBR designs, Due to the different transport characteristics of electrons and holes, these results will show that n-type DBR designs must be different than p-type designs in order to achieve the best operating characteristics for the overall laser, This analysis will demonstrate the improvement in the characteristics by comparing the simulation results of a standard VCSEL with the results of a VCSEL using improved DBR designs.

引用

页码：707 / 715

页数：9

共 21 条

[1] NUMERICAL-SIMULATION OF SUBMICROMETER DEVICES INCLUDING COUPLED NONLOCAL TRANSPORT AND NONISOTHERMAL EFFECTS [J].