ELECTRICAL CURRENT IN SOLIDS WITH POSITION-DEPENDENT BAND-STRUCTURE

被引：142

作者：

MARSHAK, AH ^{[1
]}

VANVLIET, KM ^{[1
]}

机构：

[1] UNIV MONTREAL,MATH RECH CTR,MONTREAL H3C 3J7,QUEBEC,CANADA

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 02期

关键词：

D O I：

10.1016/0038-1101(78)90272-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：417 / 427

页数：11

共 19 条

[1] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].

BARDEEN, J ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 80 (01) :72-80

[2] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].

COHEN, MH ;

FRITZSCHE, H ;

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1065-+

[3]

GROOT SRD, 1962, NONEQUILIBIRUM THERM

[4]

Jones W., 1973, THEORETICAL SOLID ST, V2

[5]

KLEPPING.DD, 1971, SOLID STATE ELECTRON, V14, P407, DOI 10.1016/0038-1101(71)90191-2

[6]

Kroemer H., 1957, RCA REV, V18, P332

[7] 2 FORMULATIONS OF SEMICONDUCTOR TRANSPORT-EQUATIONS [J].

LANDSBERG, PT ;

HOPE, SA .

SOLID-STATE ELECTRONICS, 1977, 20 (05) :421-429

[8] GENERALIZED EINSTEIN RELATION FOR SEMICONDUCTORS [J].

MARSHAK, AH ;

ASSAF, D .

SOLID-STATE ELECTRONICS, 1973, 16 (06) :675-679

[9] CARRIER DENSITIES AND EMITTER EFFICIENCY IN DEGENERATE MATERIALS WITH POSITION-DEPENDENT BAND-STRUCTURE [J].

MARSHAK, AH ;

VANVLIET, KM .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :429-434

[10] TRANSPORT EQUATIONS IN HEAVILY DOPED SILICON, AND CURRENT GAIN OF A BIPOLAR TRANSISTOR [J].

MOCK, MS .

SOLID-STATE ELECTRONICS, 1973, 16 (11) :1251-1259

← 1 2 →