GENERALIZED EINSTEIN RELATION FOR SEMICONDUCTORS

被引：44

作者：

MARSHAK, AH ^{[1
]}

ASSAF, D ^{[1
]}

机构：

[1] LOUISIANA STATE UNIV,ELECT ENGN DEPT,BATON ROUGE,LA 70803

来源：

关键词：

D O I：

10.1016/0038-1101(73)90110-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：675 / 679

页数：5

共 12 条

[1]

Adler R.B., 1964, INTRO SEMICONDUCTOR

BERRY, WB .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (02) :188-&

[3]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[4]

BLATT FJ, 1968, PHYSICS ELECTRONIC C

[5]

GASSAWAY JD, 1971, IEEE T ELECTRON DEVI, VED18, P175

KLEPPINGER, DD ;

LINDHOLM, FA .

[7]

LI SS, 1968, PR INST ELECTR ELECT, V56, P1256

[8] GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS [J].

LINDHOLM, FA ;

AYERS, RW .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03) :371-&

[9] ON VALIDITY OF EINSTEIN RELATION FOR NONEQUILIBRIUM CONDITIONS [J].

MARSHAK, AH ;

HAMILTON, DJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (06) :920-&

[10]

MARTIN TL, 1970, ELECTRONS CRYSTALS