Determination of thermal parameters of vanadium oxide uncooled microbolometer infrared detector

被引：9

作者：

Kumar, RTR ^{[1
]}

Karunagaran, B

Mangalaraj, D

Narayandass, SK

Manoravi, P

Joseph, M

Gopal, V

Madaria, RK

Singh, JP

机构：

[1] Bharathiar Univ, Thin Film Lab, Dept Phys, Coimbatore, Tamil Nadu, India

[2] Indira Gandhi Ctr Atom Res, Mat Chem Div, Kalpakkam 603102, Tamil Nadu, India

[3] Solid State Phys Lab, New Delhi 110054, India

来源：

INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 2003年 / 24卷 / 03期

关键词：

uncooled microbolometer; pulsed laser deposition; Infrared detector; vanadium oxide thin films; Thermal time constant (tau); Thermal conductance (G);

D O I：

10.1023/A:1021930717588

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vanadium oxide thin films are the potential candidates for uncooled microbolometers due to their high temperature coefficient of resistance (TCR) at room temperature. A 2D array of 10-element test microbolometer without air-gap thermal isolation structure was fabricated with pulsed laser deposited vanadium oxide as IR sensing layer for the first time. Infrared responsivity of the uncooled microbolometer was evaluated in the spectral region 8-15mum. The device exhibits responsivity of about 12 V/W at 30 Hz chopper frequency for 20muA bias current. Thermal time constant (T), Thermal conductance (G) and thermal capacitance (C) are the thermal parameters characterize the performance of the uncooled microbolometer infrared detectors are determined as 15ms, similar to10(-3) W/K and similar to3.5 x 10(-5) J/K respectively. The influence of the thermal parameters on the performance of the rnicrobolometer is discussed.

引用

页码：327 / 334

页数：8

共 10 条

[1] Characterizations of VO2-based uncooled microbolometer linear array [J].

Chen, CH ;

Yi, XJ ;

Zhao, XR ;

Xiong, BF .

SENSORS AND ACTUATORS A-PHYSICAL, 2001, 90 (03) :212-214

[2] Monolithic two-dimensional arrays of micromachined microstructures for infrared applications [J].

Cole, BE ;

Higashi, RE ;

Wood, RA .

PROCEEDINGS OF THE IEEE, 1998, 86 (08) :1679-1686

[3] A semiconductor YBaCuO microbolometer for room temperature IR imaging [J].

Jahanzeb, A ;

Travers, CM ;

CelikButler, Z ;

Butler, DP ;

Tan, SG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (10) :1795-1801

[4]

KRUSE PW, 1997, SEMICONDUCT SEMIMET, V47, P105

[5]

KUMAR RTR, 2002, IN PRESS INT C SMART

[6]

KUMAR RTR, SENS ACTUATORS A

[7]

RICE JP, 1994, P SOC PHOTO-OPT INS, V2159, P98, DOI 10.1117/12.176135

[8] Characterization and optimization of infrared poly SiGe bolometers [J].

Sedky, S ;

Fiorini, P ;

Baert, K ;

Hermans, L ;

Mertens, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (04) :675-682

[9] Design and performance of 256 x 256 bolometer-type uncooled infrared detector [J].

Wada, H ;

Nagashima, M ;

Oda, N ;

Sasaki, T ;

Kawahara, A ;

Kanzaki, M ;

Tsuruta, Y ;

Mori, T ;

Matsumoto, S ;

Shima, T ;

Hijikawa, M ;

Tsukamoto, N ;

Gotoh, H .

INFRARED DETECTORS AND FOCAL PLANE ARRAYS V, 1998, 3379 :90-100

[10]

WOOD RA, 1993, LASER FOCUS WORL JUN, P101

← 1 →