Formation of InAs self-assembled quantum rings on InP

被引：110

作者：

Raz, T ^{[1
]}

Ritter, D ^{[1
]}

Bahir, G ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 11期

关键词：

D O I：

10.1063/1.1560868

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy images show large anisotropic redistribution of the island material after coverage by a 1-nm-thick InP layer. The anisotropic material redistribution occurs within a few minutes and leads to a change from lens-like to elongated ring-like islands. The shape transformation is not accompanied by dot material compositional change. The formation of InAs/InP quantum rings disagrees with a previous model of InAs/GaAs ring formation that assumes that the driving force for the dot to ring transformation is the difference in surface diffusion velocity of indium and gallium atoms. (C) 2003 American Institute of Physics.

引用

页码：1706 / 1708

页数：3

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