Bright-line defect formation in silicon carbide injection diodes

被引:50
作者
Konstantinov, AO [1 ]
Bleichner, H [1 ]
机构
[1] IMC, ABB Corp Res, S-16425 Kista, Sweden
关键词
D O I
10.1063/1.120486
中图分类号
O59 [应用物理学];
学科分类号
摘要
irreversible formation of a network of linear defects has been observed for images showing recombination luminescence from injection diodes in hexagonal silicon carbide. The defects are related to dislocations that are initially formed as a result of thermal stress near the tip of the contact probe and subsequently propagate through the diode area. The dislocation network appears in the images of the electroluminescence as bright-line defects, in contrast to the well-known dark-line defects due to degradation of gallium-arsenide-based light-emitting devices. Higher forward currents an found to promote the dislocation growth. (C) 1997 American Institute of Physics. [S0003-6951(97)01851-2].
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页码:3700 / 3702
页数:3
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