Bright-line defect formation in silicon carbide injection diodes

被引：50

作者：

Konstantinov, AO ^{[1
]}

Bleichner, H ^{[1
]}

机构：

[1] IMC, ABB Corp Res, S-16425 Kista, Sweden

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 25期

关键词：

D O I：

10.1063/1.120486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

irreversible formation of a network of linear defects has been observed for images showing recombination luminescence from injection diodes in hexagonal silicon carbide. The defects are related to dislocations that are initially formed as a result of thermal stress near the tip of the contact probe and subsequently propagate through the diode area. The dislocation network appears in the images of the electroluminescence as bright-line defects, in contrast to the well-known dark-line defects due to degradation of gallium-arsenide-based light-emitting devices. Higher forward currents an found to promote the dislocation growth. (C) 1997 American Institute of Physics. [S0003-6951(97)01851-2].

引用

页码：3700 / 3702

页数：3

共 5 条

[1]

Amelinckx S., 1964, The direct observation of dislocations

[2] RECOMBINATION-ENHANCED DISLOCATION GLIDE IN SILICON-CARBIDE OBSERVED IN-SITU BY TRANSMISSION ELECTRON-MICROSCOPY [J].