RECOMBINATION-ENHANCED DISLOCATION GLIDE IN SILICON-CARBIDE OBSERVED IN-SITU BY TRANSMISSION ELECTRON-MICROSCOPY

被引：25

作者：

MAEDA, K

SUZUKI, K

ICHIHARA, M

机构：

来源：

MICROSCOPY MICROANALYSIS MICROSTRUCTURES | 1993年 / 4卷 / 2-3期

关键词：

D O I：

10.1051/mmm:0199300402-3021100

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The recombination enhanced dislocation glide in a 6H-SiC single crystal was studied by in-situ transmission electron microscopy. Electron beam irradiation even at room temperature induced reversible increase in the glide velocity of basal 90-degrees-partial dislocations in proportion to the beam intensity. Evidences for enhancement of the double kink formation as well as for the kink migration are presented.

引用

页码：211 / 220

页数：10

共 18 条

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