TEM INSITU OBSERVATION OF RECOMBINATION-ENHANCED MOBILITY OF DISLOCATIONS IN II-VI COMPOUNDS

被引：12

作者：

LEVADE, C

COUDERC, JJ

VANDERSCHAEVE, G

CAILLARD, D

COURET, A

机构：

[1] Laboratoire de Physique des Solides, associé au CNRS, INSA, 31077 Toulouse Cedex, Avenue de Rangueil

[2] CEMES, LOE, 31055 Toulouse Cedex

来源：

APPLIED SURFACE SCIENCE | 1991年 / 50卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(91)90149-E

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of electron-beam irradiation on the motion of dislocations in II-VI compounds has been studied by TEM in-situ experiments. Straining experiments on ZnS samples demonstrate that the dislocation mobility is proportional to the electron-beam intensity. In CdTe, screw dislocations vibrate under the electron beam and finally acquire a serrated form. These observations are discussed in terms of enhancement of dislocation motion due to non-radiative recombination of electron-hole pairs at the dislocation.

引用

页码：119 / 124

页数：6

共 16 条

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