ENHANCED DISLOCATION MOBILITY BY ELECTRON-BEAM IRRADIATION IN GAP

被引：8

作者：

MAEDA, N

TAKEUCHI, S

机构：

[1] Institute for Solid State Physics, University of Tokyo, Minato-ku, Tokyo, 106, Roppongi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 06期

关键词：

Cathodo-luminescence microscopy; Dislocation mobility; Electron:beam irradiation; Gallium phosphide; Recombination enhanced motion;

D O I：

10.1143/JJAP.29.1151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mobility of α-dislocations under stress in Te-doped n-GaP has been measured by cathodoluminescence microscopy at high temperatures. The mobility is remarkably enhanced by electron-beam irradiation. The activation energy of the dislocation velocity without irradiation is 1.48 eV, while that under the electron-beam irradiation is only 0.37 eV. © 1990 The Japan Society of Applied Physics.

引用

页码：1151 / 1152

页数：2

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