Ferroelectric behavior of epitaxial Bi2VO5.5 thin films on Si(100) formed by pulsed-laser deposition

被引：28

作者：

Joseph, M ^{[1
]}

Lee, HY ^{[1
]}

Tabata, H ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 567, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 02期

关键词：

D O I：

10.1063/1.373798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of Bi2VO5.5 have been prepared epitaxially using a pulsed-laser deposition method on a Si(100) substrate using TiN as a buffer layer and SrTiO3 as a seed layer. The films have smooth surface morphology with atomically flat terraces and steps of 4 Angstrom in height. The ferroelectric characterization shows a spontaneous polarization of 2.2 mu C/cm(2) and a coercive field (E-c) of 22 kV/cm. The leakage current obtained is about 5 x 10(-6) A/cm(2) at a drive voltage of +/- 2 V. (C) 2000 American Institute of Physics. [S0021-8979(00)00111-0].

引用

页码：1193 / 1195

页数：3

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