The stability of Pt heater and temperature sensing elements for silicon integrated tin oxide gas sensors

被引：61

作者：

Esch, H

Huyberechts, G

Mertens, R

Maes, G

Manca, J

De Ceuninck, W

De Schepper, L

机构：

[1] Interuniv Microelect Ctr, B-3001 Heverlee, Belgium

[2] Katholieke Univ Leuven, Dept Chem, B-3001 Heverlee, Belgium

[3] Inst Mat Res, B-3590 Diepenbeek, Belgium

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2000年 / 65卷 / 1-3期

关键词：

tin oxide thin film gas sensor; annealing; chemical and electrical characterization;

D O I：

10.1016/S0925-4005(99)00301-9

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Good performance of alarm systems and environmental as well as industrial control methods requires an optimal operation of the gas sensors involved. An essential point related to this challenge is an accurate control of the sensor working temperature. Therefore, the stability of the Ti/Pt heater element used in tin oxide thin film gas sensors has been investigated. It turns out that the heater element is influenced by diffusion and oxidation processes taking place during thermal treatment. This is illustrated by RES, AES and XPS measurements. The modifications in chemical composition are also found to influence the electrical characteristics R-o and TCR of the heater. (C) 2000 Elsevier Science S.A Ail rights reserved.

引用

页码：190 / 192

页数：3