Growth of large ZnSe single crystal by CVT method

被引：17

作者：

Fujiwara, S ^{[1
]}

Morishita, H ^{[1
]}

Kotani, T ^{[1
]}

Matsumoto, K ^{[1
]}

Shirakawa, T ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Basic High Technol Labs, Konohana Ku, Osaka 554, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 186卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0248(97)00441-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of ZnSe single crystals by chemical vapor transport (CVT) method using iodine as transport agent was investigated for the purpose of growing a large ZnSe crystal with a diameter of 1 in. The optimum growth temperature, seed orientation associated with the angle at the conical tip and iodine concentration were determined from the viewpoint of high growth rate and morphological stability. A 1 " empty set ZnSe single crystal was successfully grown under determined growth conditions. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：60 / 66

页数：7

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