Kinetics of silicide-induced crystallization of polycrystalline thin-film transistors fabricated from amorphous chemical-vapor deposition silicon

被引:39
作者
Kim, HS [1 ]
Couillard, JG
Ast, DG
机构
[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[2] Cornell Univ, Cornell Nanofabricat Facil, Ithaca, NY 14853 USA
关键词
D O I
10.1063/1.120898
中图分类号
O59 [应用物理学];
学科分类号
摘要
Self-aligned, n-channel, polycrystalline silicon thin-him transistors with 15 mu m channels were fabricated by recrystallizing amorphous silicon for 6 h at 500 degrees C. A thin nickel silicide at the source and drain was used to seed the crystallization. The channel mobility was initially 87 cm(2)/V s, and improved to 170 cm2/V s after hydrogenating the devices. The recrystallization velocity in the channel was measured optically and electrically, and found to be 3.5 x 10(-8) cm/s; this value exceeds by two orders of magnitude the solid-phase epitaxial regrowth rate of amorphous silicon. This observation, together with the low activation energy of 0.3 eV measured for the silicide-assisted regrowth velocity as compared to 2.76 eV for epitaxial regrowth, suggest that the channel recrystallization is assisted by Ni diffusing to the recrystallization front. (C) 1998 American Institute of Physics.
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页码:803 / 805
页数:3
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