Interfacial properties of ZrO2 on silicon

被引：63

作者：

Lin, YS ^{[1
]}

Puthenkovilakam, R

Chang, JP

Bouldin, C

Levin, I

Nguyen, NV

Ehrstein, J

Sun, Y

Pianetta, P

Conard, T

Vandervorst, W

Venturo, V

Selbrede, S

机构：

[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA

[2] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[3] Stanford Synchrotron Radiat Lab, Menlo Pk, CA 94025 USA

[4] IMEC, B-3001 Louvain, Belgium

[5] Mattson Technol Inc, Fremont, CA 94538 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 10期

关键词：

D O I：

10.1063/1.1563844

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interface of zirconium oxide thin films on silicon is analyzed in detail for their potential applications in the microelectronics. The formation of an interfacial layer of ZrSixOy with graded Zr concentration is observed by the x-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis. The as-deposited ZrO2/ZrSixOy/Si sample is thermally stable up to 880 degreesC, but is less stable compared to the ZrO2/SiO2/Si samples. Post-deposition annealing in oxygen or ammonia improved the thermal stability of as-deposited ZrO2/ZrSixOy/Si to 925 degreesC, likely due to the oxidation/nitridation of the interface. The as-deposited film had an equivalent oxide thickness of similar to1.3 nm with a dielectric constant of similar to21 and a leakage current of 3.2x10(-3) A/cm(2) at -1.5 V. Upon oxygen or ammonia annealing, the formation of SiOx and SiHxNyOz at the interface reduced the overall dielectric constants. (C) 2003 American Institute of Physics.

引用

页码：5945 / 5952

页数：8

共 59 条

[31] ULTRATHIN TANTALUM OXIDE CAPACITOR PROCESS USING OXYGEN-PLASMA ANNEALING [J].

KAMIYAMA, S ;

SUZUKI, H ;

WATANABE, H ;

SAKAI, A ;

KIMURA, H ;

MIZUKI, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (05) :1246-1251

[32] Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing [J].

Lee, BH ;

Kang, LG ;

Nieh, R ;

Qi, WJ ;

Lee, JC .

APPLIED PHYSICS LETTERS, 2000, 76 (14) :1926-1928

[33]

Lee CK, 2000, IEEE POWER ELECTRON, P27, DOI 10.1109/PESC.2000.878794

[34] High quality ultra thin CVD HfO2 gate stack with poly-Si gate electrode [J].

Lee, SJ ;

Luan, HF ;

Bai, WP ;

Lee, CH ;

Jeon, TS ;

Senzaki, Y ;

Roberts, D ;

Kwong, DL .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :31-34

[35] Dielectric property and thermal stability of HfO2 on silicon [J].

Lin, YS ;

Puthenkovilakam, R ;

Chang, JP .

APPLIED PHYSICS LETTERS, 2002, 81 (11) :2041-2043

[36]

LUAN HF, 1999, MATER RES SOC S P, V481, P7

[37] Silicon oxide/silicon nitride dual-layer films: a stacked gate dielectric for the 21st century [J].

Lucovsky, G .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1999, 254 :26-37

[38] Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces [J].

Lucovsky, G ;

Niimi, H ;

Wu, Y ;

Yang, H .

APPLIED SURFACE SCIENCE, 2000, 159 :50-61

[39] Deposition and treatment of TiO2 as an alternative for ultrathin gate dielectrics [J].

Ma, Y ;

Ono, Y ;

Hsu, ST .

ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS, 1999, 567 :355-360

[40]

MA Y, 1999, IEEE, V6

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