Charge transport properties of lightly-doped cuprates: Behavior of the Hall coefficient

被引：9

作者：

Ando, Y ^{[1
]}

Segawa, K ^{[1
]}

Lavrov, AN ^{[1
]}

Komiya, S ^{[1
]}

机构：

[1] Cent Res Inst Elect Power Ind, Tokyo 2018511, Japan

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2003年 / 131卷 / 5-6期

关键词：

D O I：

10.1023/A:1023418824783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Behavior of rho(ab)(T) and R-H(T) is presented for LSCO and YBCO single crystals in the lightly hole-doped antiferromagnetic region, with an emphasis on the R-H(T) data. In both systems, R-H is virtually constant at moderate temperatures and tends to increase at low temperatures. Since essentially the same behavior of rho(ab)(T) and R-H(T) is observed in both LSCO and YBCO, we discuss that the in-plane charge transport properties are universal among the cuprates in the lightly-doped regime and that the R-H(T) data we obtained represent the genuine behavior of the Hall effect in this regime.

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页码：793 / 801

页数：9

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