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Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers

被引：50
作者：
Sugawara, Takuya
Oshima, Yasuhiro
Sreenivasan, Raghavasimhan
McIntyre, Paul C.
机构：
[1] Tokyo Electron Ltd, Leading Edge Proc Dev Ctr, Yamanashi 4070192, Japan
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[3] Tokyo Electron Amer Ltd, Dev Planning Dept, Santa Clara, CA 95054 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 11期
关键词：
D O I：
10.1063/1.2472197
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical properties of metal-oxide-semiconductor (MOS) capacitors composed of atomic-layer-deposited (ALD) hafnium-dioxide (HfO2) dielectrics and plasma-synthesized interface layers were investigated. MOS capacitor with oxynitride interface layer shows negative flatband voltage (V-fb) shift from the ideal value. Hafnium-alkylamide ALD process performed on a plasma nitrided silicon surface causes negative V-fb shift. Germanium MOS capacitors show additional negative V-fb shift (-0.5 V). X-ray photoelectron spectroscopy shows evidence of germanium diffusion into the HfO2 layer. Germanium MOS capacitor with tantalum-oxynitride (TaON) interface layer shows superior electrical properties. These results indicate that the selection of the interface layer strongly influences germanium MOS capacitor electrical properties. (c) 2007 American Institute of Physics.
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页数：3
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