Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy

被引：26

作者：

Ferrari, S.

Spiga, S.

Wiemer, C.

Fanciulli, M.

Dimoulas, A.

机构：

[1] CNR, Lab MDM, INFM, I-20041 Milan, Italy

[2] Demokritos Natl Ctr Sci Res, MBE Lab, Inst Mat Sci, GR-15310 Athens, Greece

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 12期

关键词：

D O I：

10.1063/1.2349320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors study the Ge diffusion during HfO2 growth by molecular beam epitaxy on differently in situ prepared germanium substrates and at different growth temperatures. While HfO2 layers grown directly on Ge do not show any germanium contamination, oxygen rich interfacial layers such as GeOx or GeOxNy partly dissolve into the HfO2 layer, giving rise to high Ge contamination (from 1% to 10%). The use of nitridated interfacial layers does not prevent Ge diffusion into the HfO2 during the growth process because of the high oxygen content present in the nitridated germanium layer.

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页数：3

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