MOS capacitors on epitaxial Ge-Si1-xGex with high-κ dielectrics using RPCVD

被引：4

作者：

Chen, X ^{[1
]}

Joshi, S ^{[1
]}

Chen, J ^{[1
]}

Ngai, T ^{[1
]}

Banerjee, SK ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 09期

关键词：

Ge-epi-on-Si; high-kappa; MOS; remote plasma-assisted chemical vapor deposition (RPCVD);

D O I：

10.1109/ted.2004.833957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the successful growth of MOS capacitor stacks with low temperature strained epitaxial Ge or Si1-xGex(x = 0.9) layer directly on Si substrates, and with HfO2 (EOT = 9.7 Angstrom) as high-kappa dielectrics, both using a novel remote plasma-assisted chemical vapor deposition technique. These novel MOS capacitors, which were fabricated entirely at or below 400 degreesC, exhibit normal capacitance-voltage and current-voltage characteristics.

引用

页码：1532 / 1534

页数：3

共 5 条

[1]

Chui CO, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P437, DOI 10.1109/IEDM.2002.1175872

[2]

CHUI CO, 2002, P DEVICE RES C, P191

[3] Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric [J].