Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

被引：223

作者：

Kang, L ^{[1
]}

Lee, BH ^{[1
]}

Qi, WJ ^{[1
]}

Jeon, Y ^{[1
]}

Nieh, R ^{[1
]}

Gopalan, S ^{[1
]}

Onishi, K ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 04期

关键词：

gate dielectric; hafnium oxide; HfO2;

D O I：

10.1109/55.830975

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical and reliability properties of ultrathin HfO2 have been investigated. Pt electroded MOS capacitors with HfO2 gate dielectric (physical thickness similar to 45-135 Angstrom and equivalent oxide thickness similar to 13.5-25 Angstrom) were fabricated. HfO2 was deposited using reactive sputtering of Hf target with O-2 modulation technique. Leakage current of the 45 Angstrom HfO2 sample was about 1 x 10(-4)A/cm(2) at +1.0 V with a breakdown field similar to 8.5 MV/cm. Hysteresis was <100 mV after 500 degrees C annealing in N-2 ambient and there was no significant frequency dispersion of capacitance (<1%/dec.). It was also found that HfO2 exhibits negligible charge trapping and excellent TDDB characteristics with more than ten Sears life- time even at V-DD = 2.0 V.

引用

页码：181 / 183

页数：3

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