Surface Immobilized Heteroleptic Copper Compounds as State Variables that Show Negative Differential Resistance

被引：14

作者：

Kabehie, Sanaz ^{[1
,2
]}

Stieg, Adam Z. ^{[2
]}

Xue, Mei ^{[2
,3
]}

Liong, Monty ^{[2
]}

Wang, Kang L. ^{[1
,2
,3
]}

Zink, Jeffrey I. ^{[1
,2
]}

机构：

[1] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

[3] Univ Calif Los Angeles, Device Res Lab, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2010年 / 1卷 / 03期

基金：

美国国家科学基金会;

关键词：

CHARGE-TRANSFER; STRUCTURAL DISTORTIONS; BIS-PHENANTHROLINE; COMPLEXES; SILICA; EXCITATION; PROBE;

D O I：

10.1021/jz900324f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Surface immobilized bidentate heteroleptic Cu(I) compounds are synthesized using a surface outward sequential synthesis and are characterized using solid-state NMR and atomic force microscopy (AFM). Through use of chemical redox agents, the reversible switching characteristics of SiO2-immobilized Cu(I) compounds (tetrahedral) to Cu(II) (square planar) are verified via UV-visible absorption spectroscopy and electron paramagnetic resonance. Electrical properties of this system are characterized via preparation of a sandwich-type device using p(+) silicon and conductive AFM (cAFM). Current-Voltage (I-V) spectroscopy demonstrates that this system reproducibly switches between Cu(I) and Cu(II) states at approximately -0.8 and 2.3 V.

引用

页码：589 / 593

页数：5

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