Study of integrated RF passive components performed using CMOS and Si micromachining technologies

被引:21
作者
LopezVillegas, JM
Samitier, J
Bausells, J
Merlos, A
Cane, C
Knochel, R
机构
[1] CTR NACL MICROELECT,DEPT SILICIO,E-08193 BELLATERRA,SPAIN
[2] CHRISTIAN ALBRECHTS UNIV KIEL,TECH FAK,LEHRSTUHL HOCHFREQUENZTECH,D-24143 KIEL,GERMANY
关键词
D O I
10.1088/0960-1317/7/3/022
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Silicon integrated RF passive components performed using standard CMOS processes and silicon micromachining post-processing are studied. The results indicate that the removal of the Si substrate under the components using micromachining technology is a very suitable procedure to improve their electrical performance, The self-resonant frequency and maximum quality factor of the inductors are increased by a factor about three. Similar results are obtained for interdigitized capacitors.
引用
收藏
页码:162 / 164
页数:3
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