3.3 ps SiGe bipolar technology

被引：37

作者：

Böck, J ^{[1
]}

Schäfer, H ^{[1
]}

Knapp, H ^{[1
]}

Aufinger, K ^{[1
]}

Wurzer, M ^{[1
]}

Boguth, S ^{[1
]}

Böttner, T ^{[1
]}

Stengl, R ^{[1
]}

Perndl, W ^{[1
]}

Meister, TF ^{[1
]}

机构：

[1] Infineon Technol, D-81739 Munich, Germany

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A SiGe bipolar technology with a transit frequency of 225 GHz and a maximum oscillation frequency of 300 GHz is described. With a ring oscillator gate delay of 3.3 ps and a static frequency divider operating up to 102 GHz input frequency state-of-the-art circuit performance is achieved.

引用

页码：255 / 258

页数：4

共 7 条

[1]

BOCK J, 2004, IN PRESS P BCTM

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[3]

KNAPP H, 2003, SYMPOSIUM, P1067

[4]

Meister TF, 2003, BCTM PROC, P103

[5]

Rieh JS, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P771, DOI 10.1109/IEDM.2002.1175952

[6]

RIEH JS, 2004, RFIC S, P395

[7]

Rücker H, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P121

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