Origins of Improved Hole-injection Efficiency by the Deposition of MoO3 on the Polymeric Semiconductor Poly (dioctylfluorene-alt-benzothiadiazole)

被引：102

作者：

Nakayama, Yasuo ^{[1
]}

Morii, Katsuyuki ^{[3
]}

Suzuki, Yuuichirou ^{[2
]}

Machida, Hiroyuki ^{[2
]}

Kera, Satoshi ^{[2
]}

Ueno, Nobuo ^{[2
]}

Kitagawa, Hiroshi ^{[3
]}

Noguchi, Yutaka ^{[1
,2
]}

Ishii, Hisao ^{[1
,2
]}

机构：

[1] Chiba Univ, Ctr Frontier Sci, Inage Ku, Chiba 2638522, Japan

[2] Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan

[3] Kyushu Univ, Japan Sci & Technol Agcy, Fac Sci, CREST,Higashi Ku, Fukuoka 8128581, Japan

来源：

ADVANCED FUNCTIONAL MATERIALS | 2009年 / 19卷 / 23期

关键词：

METAL-OXIDES; ELECTRON-SPECTROSCOPY; FILM; ORIENTATION; INTERFACE; SURFACE; LAYER;

D O I：

10.1002/adfm.200901022

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The electronic structure of the interfaces formed after deposition of MoO3 hole-injection layers on top of a polymer light-emitting material, poly(dioctylfluorene-alt-benzothiadiazole) (F8BT), is studied by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy and metastable atom electron spectroscopy. Significant band bending is induced in the F8BT film by MoO3 "acceptors" that spontaneously diffuse into the F8BT "host" probably driven by kinetic energy of the desposited hot MoO3. Further deposition leads to the saturation of the band bending accompanied by the formation of MoO3 overlayers. Simultaneously, a new electronic state in the vicinity of the Fermi level appears on the UPS spectra. Since this peak does not appear in the bulk MoO3 film, it can be assigned as an interface state between the MoO3 overlayer and underlying F8BT film. Both band bending and the interface state should result from charge transfer from F8BT to MoO3, and they appear to be the origin of the hold-injection enhancement by the insertion of MoO3 layers between the F8BT light-emitting diodes and top anodes.

引用

页码：3746 / 3752

页数：7

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