Zinc oxide films formed by oxidation of zinc under low partial pressure of oxygen

被引：24

作者：

Gao, W

Li, ZW

Harikisun, R

Chang, SS

机构：

[1] Univ Auckland, Dept Chem & Mat Engn, Auckland 1, New Zealand

[2] Kangnung Natl Univ, Dept Ceram Engn, Kangnung, South Korea

来源：

MATERIALS LETTERS | 2003年 / 57卷 / 08期

关键词：

zinc oxide; photoluminescence; oxidation; low partial pressure of oxygen;

D O I：

10.1016/S0167-577X(02)01003-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zinc oxide (ZnO) thin films were prepared through thermal oxidation of metallic zinc samples under various oxygen partial pressures at 330 and 390 degreesC. The surface morphologies of the oxide films formed were characterised with high-resolution scanning electron microscopy (HR-SEM). These oxide films consist of nano-sized whisker and cluster-like grains. The photoluminescence (PL) properties of ZnO films were also analysed. Near-band edge ultra-violet (UV) emission was observed, as well as green emission. It was found that the UV to green emission ratio had clear relation with the oxygen partial pressure during oxidation. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1435 / 1440

页数：6